sft1202 no. a1169-1/9 applications ? dc / dc converter, relay drivers, lamp drivers, motor drivers, inverter features ? adoption of fbet, mbit process ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? high allowable power dissipation speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 180 v collector-to-emitter voltage v ces 180 v collector-to-emitter voltage v ceo 150 v emitter-to-base voltage v ebo 7v collector current i c 2a collector current (pulse) i cp 3a base current i b 400 ma continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : ena1169a 80812 tkim/73008ea tiim tc-00001478 sanyo semiconductors data sheet sft1202 npn epitaxial planar silicon transistor high-voltage switching applications http://www.sanyosemi.com/en/network/ product & package information ? package : tp ? package : tp-fa ? jeita, jedec : s c-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-f a t1202 lot no. 2,4 3 1 SFT1202-E sft1202-tl-e
sft1202 no. a1169-2/9 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 1w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =80v, i e =0a 1 a emitter cutoff current i ebo v eb =4v, i c =0a 1 a dc current gain h fe v ce =5v, i c =100ma 200 560 gain-bandwidth product f t v ce =10v, i c =300ma 140 mhz output capacitance cob v cb =10v, f=1mhz 12 pf collector-to-emitter saturation voltage v ce (sat)1 i c =1a, i b =100ma 110 165 mv v ce (sat)2 i c =0.5a, i b =50ma 65 100 mv base-to-emitter saturation voltage v be (sat) i c =1a, i b =100ma 0.85 1.2 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 180 v collector-to-emitter breakdown voltage v (br)ces i c =100 a, r be = 0 180 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 150 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 7 v turn-on time t on see speci ed test circuit. 50 ns storage time t stg 1460 ns fall time t f 70 ns switching time test circuit ordering information device package shipping memo SFT1202-E tp 500pcs./bag pb free sft1202-tl-e tp-fa 700pcs./reel v r r b v cc =75v i c =10i b1 = --10i b2 =0.5a v be = --5v + + 50 input outpu t r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2
sft1202 no. a1169-3/9 cob -- v cb v be (sat) -- i c v ce (sat) -- i c h fe -- i c i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v f t -- i c 1.0 2 0.1 ta= --25 c 75 c 3 7 5 2 23 5 23 2 7 1.0 357 0.01 i c / i b =10 it13549 25 c 0.1 23 5 23 2 7 1.0 357 0.01 0.1 7 5 3 2 7 3 2 0.01 ta=75 c 25 c --25 c it13548 i c / i b =10 5 5 2 7 3 7 3 10 0.1 37 2 1.0 2 537 2 100 5 37 10 5 it13547 100 10 2 2 3 7 5 3 7 25 32 0.01 0.1 7 5 3 1.0 it13546 v ce =10v f=1mhz ta=75 c --25 c v ce =5v v ce =5v it13545 100 7 1000 7 5 3 2 5 3 2 10 7 0.01 3 25 2 0.1 7 35 235 1.0 ta=75 c 25 c --25 c 2.5 2.0 1.0 1.5 0.5 0 0 0.2 0.4 0.6 0.8 1.2 1.0 it13544 25 c i c -- v ce collector-to-emitter voltage, v ce -- v collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector current, i c -- a 5ma 500ma 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.5 0.1 0.3 i b =0ma it13542 2.0 1.5 1.0 0.5 0 02 5 134 1ma 20ma 40ma 60ma 80ma 2ma i b =0ma it13543 10ma 5ma 160ma 120ma 10ma 20ma 40ma 60ma 100ma 100ma 120ma 200ma 80ma 250ma 200ma
sft1202 no. a1169-4/9 p c -- tc collector dissipation, p c -- w case temperature, tc -- c it13553 0 0 20 40 0.6 1.0 1.2 0.4 0.2 0.8 60 80 100 120 140 160 0 16 10 12 14 15 8 6 4 2 20 060 40 80 100 140 120 160 it13554 collector current, i c -- a collector-to-emitter voltage, v ce -- v a s o p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c collector current, i c -- a collector-to-emitter voltage, v ce -- v a s o 0.1 7 2 5 3 2 5 3 2 2.5 1.0 7 5 3 0.01 0.01 0.1 25 323 72 1.0 5 37 2 10 5 37 2 100 5 37 i c =2a 10ms 100ms dc operation 1ms i cp =3a it13555 100 s 500 s 0.1 7 2 5 3 2 5 3 2 2.5 1.0 7 5 3 0.01 0.01 0.1 25 323 72 1.0 5 37 2 10 5 37 2 100 5 37 i c =2a 10ms 100ms dc operation 1ms i cp =3a it13556 100 s 500 s ta=25 c single pulse < 10 s < 10 s tc=25 c single pulse
sft1202 no. a1169-5/9 taping speci cation sft1202-tl-e
sft1202 no. a1169-6/9 outline drawing land pattern example sft1202-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
sft1202 no. a1169-7/9 bag packing speci cation SFT1202-E
sft1202 no. a1169-8/9 outline drawing SFT1202-E mass (g) unit 0.315 * for reference mm
sft1202 ps no. a1169-9/9 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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